Increased data volume and writing speed in a new antiferromagnetic-based memory
Ferromagnetic and antiferromagnetic memory
In general, data memory and storage rely on the use of ferromagnetic materials. However, these are associated with two drawbacks. Firstly, the areal density and, thus, the storage capacity of these materials is restricted as they necessarily reach natural limits. This is because each bit of information is stored in a kind of tiny bar magnet, each of which represents a 0 or a 1 depending on its alignment. But if these bar magnets are placed too close together, they begin to influence each other. The second problem is that there are also restrictions on the speeds with which data can be written to this type of storage medium. It is not possible to go faster than gigahertz rates. Otherwise it would require immense energy.
But this is not the case with antiferromagnetic memories. They can be written to at a much higher density because in these the bar magnets are always aligned alternately and so have no effect on each other. This means they can store considerably more data. And they allow much faster writing speeds.
Antiferromagnetic memory allows for terahertz processing rates
“If you want to send information, such as moving images of a soccer match, you send this in the form of light that can be transmitted by fiber-optic cables,” explained Professor Jairo Sinova, Head of INSPIRE, the Interdisciplinary Spintronics Research group at Johannes Gutenberg University Mainz. “As this is possible at frequencies in the terahertz range, this happens extremely rapidly. At present, the reception speed has to be slowed down to be processed by the computer or television because these devices process and store data using electricity-based techniques, and the speed these operate at is just a few hundred gigahertz. Our antiferromagnetic memory concept is now capable of working directly with data sent at rates in the terahertz range.” This means the signal no longer has to be slowed down by the device. Instead it can also be processed at terahertz speeds by the computer or TV.
The team of scientists carried out the initial research back in 2014. They passed an electric current through the antiferromagnets and were thus able to appropriately align the tiny storage units. They originally used a cable for this, a rather slow connection method. “Instead of the cable we use now a short laser pulse to induce an electric current. This current aligns the bar magnets, in other words, their spin moments,” said Sinova. Instead of using cables the new memory thus works wirelessly, and instead of requiring direct electric current, the effects are now generated using light. Thanks to this, the researchers were able to dramatically increase speeds, thus meeting the requirements necessary to enable future users to view judder-free, ultra-high definition images.
The Latest on: Antiferromagnetic memory
via Google News
The Latest on: Antiferromagnetic memory
- Antiferromagnetic materials allow for processing at terahertz speeds on May 25, 2018 at 11:26 am
Our antiferromagnetic memory concept is now capable of working directly with data sent at rates in the terahertz range." This means the signal no longer has to be slowed down by the device. Instead it ... […]
- Antiferromagnetic materials allow for processing at terahertz speeds on May 25, 2018 at 2:52 am
It is not possible to go faster than gigahertz rates without immense energy expenditure. But this is not the case with antiferromagnetic memory, which can be written at a much higher density because ... […]
- Antiferromagnetic materials allow for processing at terahertz speeds on May 24, 2018 at 7:18 am
Ferromagnetic and antiferromagnetic memory In general, data memory and storage rely on the use of ferromagnetic materials. However, these are associated with two drawbacks. Firstly, the areal density ... […]
- Data storage prospects broaden for antiferromagnetics on May 23, 2018 at 5:00 pm
Antiferromagnetic materials have a lot going for them for high-density fast-operating memory applications. As Tsinghua University researcher Song Cheng points out they have no net magnetic moment, ... […]
- Magnetism has the pull to transform our digital lives on March 13, 2018 at 5:56 am
If all of this potential could be realised, antiferromagnetic memory would be an excellent candidate for a so-called “universal memory”, replacing all other forms of memory in computing, and ... […]
- Spin transport and spin torque in antiferromagnetic devices on March 7, 2018 at 3:48 pm
We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices. […]
- Focus: Quick Changes in Magnetic Materials on November 6, 2017 at 11:25 am
Faster rewriting. A study of the response of ferromagnetic and antiferromagnetic regions in the same material may point to faster ways to edit the information stored in magnetic memory devices such as ... […]
- Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility on May 19, 2017 at 3:00 am
Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. ... […]
- Random access memory on a low energy diet on January 3, 2017 at 8:23 am
The goal is therefore to produce a purely antiferromagnetic magnetoelectric memory (AF-MERAM). This is precisely what the research teams from Dresden and Basel have now managed to do. They developed a ... […]
via Bing News