A team of IBM researchers in Zurich, Switzerland, with support from colleagues in Yorktown Heights, N.Y., has developed a relatively simple, robust and versatile process for growing crystals made from compound semiconductor materials that will allow them be integrated onto silicon wafers—an important step toward making future computer chips that will allow integrated circuits to continue shrinking in size and cost even as they increase in performance.
Appearing in Applied Physics Letters, the work may allow an extension to Moore’s Law, the famous observation by Gordon Moore that the number of transistors on an integrated circuit double about every two years. In recent years some in the industry have speculated that our ability to keep pace with Moore’s Law may become exhausted eventually unless new technologies come along that will lend it leash.
“The whole semiconductor industry wants to keep Moore’s Law going. We need better performing transistors as we continue down-scaling, and transistors based on silicon won’t give us improvements anymore,” said Heinz Schmid, a researcher with IBM Research GmbH at Zurich Research Laboratory in Switzerland and the lead author on the paper.
For consumers, extending Moore’s Law will mean continuing the trend of new computer devices having increasing speed and bandwidth at reduced power consumption and cost. The new technique may also impact photonics on silicon, with active photonic components integrated seamlessly with electronics for greater functionality.
How the work was done
The IBM team fabricated single crystal nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3-D stacked nanowires, made with so-called III-V materials. Made from alloys of indium, gallium and arsenide, III-V semiconductors are seen as a possible future material for computer chips, but only if they can be successfully integrated onto silicon. So far efforts at integration have not been very successful.
The new crystals were grown using an approach called template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition, which basically starts from a small area and evolves into a much larger, defect-free crystal. This approach allowed them to lithographically define oxide templates and fill them via epitaxy, in the end making nanowires, cross junctions, nanostructures containing constrictions and 3-D stacked nanowires using the already established scaled processes of Si technology.
“What sets this work apart from other methods is that the compound semiconductor does not contain detrimental defects, and that the process is fully compatible with current chip fabrication technology,” said Schmid. “Importantly the method is also economically viable.”
Read more: Futuristic components on silicon chips
The Latest on: Single crystal nanostructures
via Google News
The Latest on: Single crystal nanostructures
- Physicists couple key components of quantum technologieson October 9, 2019 at 8:07 am
Quantum effects are genuinely found in the world of nanostructures ... sources for single photons with nanophotonic networks. This interface consists of so-called photonic crystals, i.e ...
- Scientists discover how to detect precancerous conditions with nanodiamondson October 7, 2019 at 8:23 am
Detonation nanodiamonds (DNDs) are carbon nanostructures with a crystal lattice ... in thin membranes obtained by spraying one wafer onto a single-crystal silicone surface, Ekaterina Boruleva, a ...
- Synopsis: Placing Single Impurities into a Crystalon September 4, 2019 at 8:16 am
However, implanting single-ion impurities inside crystals consistently and precisely has proved challenging. Current methods involve accelerating the ions to high energies, which allows detection of ...
- Nano-confined crystallization of organic ultrathin nanostructure arrays with programmable geometrieson September 2, 2019 at 2:09 am
However, the fabrication of ultrathin organic nanostructures with precise alignment, tunable morphology and high crystallinity for device integration remains challenging. Herein, an assembly technique ...
- Polymer crystals hold key to record-breaking energy transporton May 24, 2018 at 2:46 pm
Scientists from the universities of Bristol and Cambridge have found a way to create polymeric semiconductor nanostructures that absorb light and transport its energy further than previously observed.
- XRD - D8 QUEST ECO - ECOfriendly, ECOnomical Single Crystal X-Ray Diffractionon April 19, 2018 at 3:42 am
Let us help you with your inquiries, brochures and pricing requirements Request A Quote Download PDF Copy Download Brochure The D8 QUEST ECO research instrument ...
- XRD - D8 QUEST - Quality in Single Crystal X-Ray Diffractionon April 19, 2018 at 3:17 am
a compact solution featuring the innovative PHOTON II CPAD DETECTOR for conducting single wavelength experiments. The D8 QUEST provides good sample visibility, accessibility and high experimental ...
- Thermoelectric Properties of Tin Selenide Nanostructureson March 29, 2018 at 8:11 am
Single crystal tin selenide (SnSe ... so they measured the power factor of the materials they created. To grow SnSe nanostructures, they made use of a chemical vapor deposition (CVD) process. They ...
- Exploring the thermoelectric properties of tin selenide nanostructureson March 27, 2018 at 3:54 pm
Single crystal tin selenide is a semiconductor and an ideal thermoelectric ... so they measured the power factor of the materials they made. To grow SnSe nanostructures, they used a chemical vapor ...
- Exploring the thermoelectric properties of tin selenide nanostructureson March 27, 2018 at 7:40 am
To grow SnSe nanostructures, they used a chemical vapor deposition ... "the nanostructure SnSe thin films we fabricated had a power factor of only ~5 percent of that of single crystal SnSe at room ...
via Bing News