To encode data, today’s computer memory technology uses electric currents – a major limiting factor for reliability and shrinkability, and the source of significant power consumption.
If data could instead be encoded without current – for example, by an electric field applied across an insulator – it would require much less energy, and make things like low-power, instant-on computing a ubiquitous reality.A team at Cornell University led by postdoctoral associate John Heron, who works jointly with Darrell Schlom, professor of Industrial Chemistry in the Department of Materials Science and Engineering, and Dan Ralph, professor of Physics in the College of Arts and Sciences, has made a breakthrough in that direction with a room-temperature magnetoelectric memory device. Equivalent to one computer bit, it exhibits the holy grail of next-generation nonvolatile memory: magnetic switchability, in two steps, with nothing but an electric field.
Their results were published online Dec. 17 in Nature (“Deterministic switching of ferromagnetism at room temperature using an electric field”), along with an associated “News and Views” article.“The advantage here is low energy consumption,” Heron said. “It requires a low voltage, without current, to switch it. Devices that use currents consume more energy and dissipate a significant amount of that energy in the form of heat. That is what’s heating up your computer and draining your batteries.”
The Latest on: Multiferroic device
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The Latest on: Multiferroic device
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A multiferroic is a material characterized by ... Multiferroics are applicable in ultrafast magnetic memory devices, anti-reflective coatings, and fast data transmission at terahertz frequencies ...
- Small but self-imposing: Titanium alters behavior of host lattice atomson July 27, 2020 at 9:50 am
A multiferroic is a material characterized by more than one ... Multiferroics are applicable in ultrafast magnetic memory devices, anti-reflective coatings, and fast data transmission at terahertz ...
- Manufacturing Bits: July 26on July 25, 2020 at 5:00 pm
Multiferroic materials have both ferroelectric and ferromagnetic ... “These novel oxides are normally grown on materials that are not compatible with computing devices,” says Jay Narayan, the John C.
- Researchers realize nanoscale electrometry based on magnetic-field-resistant spin sensoron July 17, 2020 at 7:14 am
Benefited from the in situ compatibility with diamond-based semiconductor devices and the potential ... the characterization of multiferroic materials. They also use this method to study the ...
- Researchers realize nanoscale electrometry based on magnetic-field-resistant spin sensorson July 16, 2020 at 5:00 pm
A team led by Prof. Du Jiangfeng, Prof. Shi Fazhan, and Prof. Wang Ya from University of Science and Technology of China, of the Chinese Academy of Sciences, proposed a robust electrometric method ...
- How to Make the Electronics That Make Wearables Fiton July 16, 2020 at 5:00 pm
Electronic devices are shrinking in size to increase portability ... As for the future of the material, researchers plan to continue working with the film to improve its multiferroic properties before ...
- Electric-field-driven non-volatile multi-state switching of individual skyrmions in a multiferroic heterostructureon July 16, 2020 at 5:00 pm
Figure 3b presents the schematic of an envisioned cross-bar random access memory device that employs the nanostructured FM/FE multiferroic heterostructure with the stripe, skyrmion, and vortex as ...
- How the New Quantum 'MESO' Architecture Could Replace CMOSon July 7, 2020 at 5:00 pm
MESO stores information and conducts logic operatings via up-and-down magnetic spins in a multiferroic material ... How do you read out from the device? That discovery occurred in 2012 when ...
- A force of nature for pushing boundarieson September 6, 2019 at 1:28 pm
Their work demonstrates that the intrinsic interfacial multiferroic effect can be a ... of smaller and more efficient electronic devices, including spintronic and new magnetoelectric devices.
- New NSF Engineering Research Center to Create Chip-scale Electromagnetic Devices Enabled by Nanosystem Breakthroughon December 29, 2018 at 7:19 am
Such ferromagnetic rings may be used in the fabrication of nanoscale motors at the NSF Nanosystems Engineering Research Center (NERC) for Translational Applications of Nanoscale Multiferroic Systems ...
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