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Goodbye Flash Memory - Hello ReRAM - Faster, Cheaper, Much Less Energy and Space Use

Goodbye Flash Memory – Hello ReRAM – Faster, Cheaper, Much Less Energy and Space Use

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  •  May 25, 2012
  •  Goodbye Flash Memory – Hello ReRAM – Faster, Cheaper, Much Less Energy and Space Use
  •  Posted by innovation at 11:58 am
  •  No Responses
  •  Artificial Intelligence, Cutting-edge, FYI, Innovation, Process of Innovation / Invention, Promising, Shape of Things to Come?, University College London
  •  Tagged with: cheap memory, Electrical resistance and conductance, fast memory, flash memory, goodbye flash memory, goodbye flash memory 8211 hello reram 8211 faster cheaper much less energy and space use, greater memory storage, journal of applied physics, memory chip, memory storage, memristors, new super-fast memory, ReRAM, Resistive random-access memory, silicon oxide, silicon oxide chips, solid silicon oxide, transparent memory chips, UCL, USB flash drive
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The technology has promising applications beyond memory storage   The first purely silicon oxide-based ‘Resistive RAM’ memory chip that can operate in ambient conditions – opening up the possibility of new super-fast memory – has [...]

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Resistive RAMUCLelectrical resistanceFlash memoryUSB sticksRead more . . .